Semiconductor devices with raised doped crystalline structures

ABSTRACT

Semiconductor devices including an elevated or raised doped crystalline structure extending from a device layer are described. In embodiments, III-N transistors include raised crystalline n+ doped source/drain structures on either side of a gate stack. In embodiments, an amorphous material is employed to limit growth of polycrystalline source/drain material, allowing a high quality source/drain doped crystal to grow from an undamaged region and laterally expand to form a low resistance interface with a two-degree electron gas (2DEG) formed within the device layer. In some embodiments, regions of damaged GaN that may spawn competitive polycrystalline overgrowths are covered with the amorphous material prior to commencing raised source/drain growth.

BACKGROUND

Demand for integrated circuits (ICs) in portable electronic applicationshas motivated greater levels of semiconductor device integration. Manyadvanced semiconductor devices in development leverage non-siliconsemiconductor materials, including compound semiconductor materials(e.g., GaAs, InP, InGaAs, InAs, and III-N materials). III-N materials,as well as other materials with wurtzite crystallinity, such as, but notlimited to AgI, ZnO, CdS, CdSe, α-SiC, and BN, show particular promisefor high voltage and high frequency applications like power managementICs and RF power amplifiers. III-N heteroepitaxial (heterostructure)field effect transistors (HFET), such as high electron mobilitytransistors (HEMT) and metal oxide semiconductor (MOS) HEMT, employ asemiconductor heterostructure with one or more heterojunction, forexample at an interface of a GaN semiconductor and another III-Nsemiconductor alloy, such as AlGaN or AlInN. GaN-based HFET devicesbenefit from a relatively wide bandgap (˜3.4 eV), enabling higherbreakdown voltages than Si-based MOSFETs, as well as high carriermobility. The III-N material system is also useful for photonics (e.g.,LEDs), photovoltaics, and sensors, one or more of which may be useful tointegrate into an electronic device platform.

For many non-silicon device materials it can be challenging to providedoped semiconductor material suitable for making a good ohmic contact.Contact structures and techniques to reduce contact resistance and sheetresistance may advantageously reduce overall device resistance toenhance device performance and/or reduce device power consumption.

BRIEF DESCRIPTION OF THE DRAWINGS

The material described herein is illustrated by way of example and notby way of limitation in the accompanying figures. For simplicity andclarity of illustration, elements illustrated in the figures are notnecessarily drawn to scale. For example, the dimensions of some elementsmay be exaggerated relative to other elements for clarity. Further,where considered appropriate, reference labels have been repeated amongthe figures to indicate corresponding or analogous elements. In thefigures:

FIG. 1A is a cross-sectional view of a semiconductor device structureincluding a raised doped crystalline material wrapping-around anon-silicon crystalline edge of a recess lined with an amorphousmaterial, in accordance with some embodiments;

FIG. 1B is a cross-sectional view of a semiconductor device structurefurther depicting a raised doped crystalline material as the crystalgrowth front evolves to meet a non-silicon crystalline edge of a recess,in accordance with some embodiments;

FIG. 2 is a cross-sectional view of a semiconductor device structureincluding a raised doped crystalline material wrapping-around a raisednon-silicon crystalline body extending over an amorphous material, inaccordance with some embodiments;

FIGS. 3 and 4 are cross-sectional views depicting GaN transistorsincluding raised wrap-around crystalline source/drain material, inaccordance with some embodiments;

FIGS. 5 and 6 are flow diagrams illustrating methods of forming raisedwrap-around crystalline source/drain material, in accordance withembodiments;

FIGS. 7A, 7B, 7C, 7D, 7E, 7F, 7G, and 7H are cross-sectional views of anSoC evolving as selected operations in the method illustrated in FIG. 6are performed, in accordance with embodiments;

FIG. 8 illustrates a mobile computing platform and a data server machineemploying an SoC including silicon FETs on silicon, and GaN HFETsincluding raised wrap-around crystalline source/drain material, inaccordance with embodiments of the present invention; and

FIG. 9 is a functional block diagram of an electronic computing device,in accordance with an embodiment of the present invention.

DETAILED DESCRIPTION

One or more embodiments are described with reference to the enclosedfigures. While specific configurations and arrangements are depicted anddiscussed in detail, it should be understood that this is done forillustrative purposes only. Persons skilled in the relevant art willrecognize that other configurations and arrangements are possiblewithout departing from the spirit and scope of the description. It willbe apparent to those skilled in the relevant art that techniques and/orarrangements described herein may be employed in a variety of othersystems and applications other than what is described in detail herein.

Reference is made in the following detailed description to theaccompanying drawings, which form a part hereof and illustrate exemplaryembodiments. Further, it is to be understood that other embodiments maybe utilized and structural and/or logical changes may be made withoutdeparting from the scope of claimed subject matter. It should also benoted that directions and references, for example, up, down, top,bottom, and so on, may be used merely to facilitate the description offeatures in the drawings. Therefore, the following detailed descriptionis not to be taken in a limiting sense and the scope of claimed subjectmatter is defined solely by the appended claims and their equivalents.

In the following description, numerous details are set forth. However,it will be apparent to one skilled in the art, that the presentinvention may be practiced without these specific details. In someinstances, well-known methods and devices are shown in block diagramform, rather than in detail, to avoid obscuring the present invention.Reference throughout this specification to “an embodiment” or “oneembodiment” or “some embodiments” means that a particular feature,structure, function, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention.Thus, the appearances of the phrase “in an embodiment” or “in oneembodiment” or “some embodiments” in various places throughout thisspecification are not necessarily referring to the same embodiment ofthe invention. Furthermore, the particular features, structures,functions, or characteristics may be combined in any suitable manner inone or more embodiments. For example, a first embodiment may be combinedwith a second embodiment anywhere the particular features, structures,functions, or characteristics associated with the two embodiments arenot mutually exclusive.

As used in the description and the appended claims, the singular forms“a”, “an” and “the” are intended to include the plural forms as well,unless the context clearly indicates otherwise. It will also beunderstood that the term “and/or” as used herein refers to andencompasses any and all possible combinations of one or more of theassociated listed items.

The terms “coupled” and “connected,” along with their derivatives, maybe used herein to describe functional or structural relationshipsbetween components. It should be understood that these terms are notintended as synonyms for each other. Rather, in particular embodiments,“connected” may be used to indicate that two or more elements are indirect physical, optical, or electrical contact with each other.“Coupled” may be used to indicated that two or more elements are ineither direct or indirect (with other intervening elements between them)physical or electrical contact with each other, and/or that the two ormore elements co-operate or interact with each other (e.g., as in acause an effect relationship).

The terms “over,” “under,” “between,” and “on” as used herein refer to arelative position of one component or material with respect to othercomponents or materials where such physical relationships arenoteworthy. For example in the context of materials, one material ormaterial disposed over or under another may be directly in contact ormay have one or more intervening materials. Moreover, one materialdisposed between two materials or materials may be directly in contactwith the two layers or may have one or more intervening layers. Incontrast, a first material or material “on” a second material ormaterial is in direct contact with that second material/material.Similar distinctions are to be made in the context of componentassemblies.

As used throughout this description, and in the claims, a list of itemsjoined by the term “at least one of” or “one or more of” can mean anycombination of the listed terms. For example, the phrase “at least oneof A, B or C” can mean A; B; C; A and B; A and C; B and C; or A, B andC.

Described herein are heteroepitaxial structures including one or moreraised crystalline doped semiconductor material regrown on a crystallineseeding surface adjacent to an amorphous material. In some embodiments,the amorphous material is disposed relative to a crystalline seedingsurface to hinder growth of lower quality doped material (e.g.,polycrystalline). Grown crystalline doped semiconductor material isideally single crystalline for lowest sheet resistance and contactresistance to an underlying device layer. In some exemplary embodiments,a raised, or elevated, doped semiconductor material of wurtzitecrystallinity is grown on a top surface of a polarization layer. In someembodiments, lateral growth of the doped crystalline material ispromoted while an amorphous material blocks damaged regions of thegrowth substrate where competitive growths of low quality material mightotherwise be nucleated. In some embodiments, the raised crystallinedoped semiconductor material wraps around a sidewall of an underlyingcrystalline structure to make contact with a region of the device layerto interface a two-degree electron gas (2DEG).

As described below, raised epitaxial doped crystalline structures andtechniques exemplified herein offer improved crystallinity, ideallysingle crystalline, particularly within wurtzite material systems, suchas the GaN materials. In some advantageous embodiments, and as furtherexemplified below, nucleation of polycrystalline III-N material isselectively impeded through use of an amorphous growth mask material,which may be sacrificial, or permanently incorporated into the finaldevice structure.

The inventors have found that doped semiconductor material grown fromseeding surfaces that have sustained damaged, for example during arecess etch process, may have polycrystalline microstructure orextremely high dislocation densities. Such low-quality source/drainmaterial may result in disadvantageously high device contact resistance.In accordance with embodiments described herein, nucleation ofsemiconductor material upon damaged surfaces may be deliberatelyhindered, for example through application of a mask of amorphousmaterial to cover at least a portion of the damaged surface(s). Regrowthmaterial may thereby nucleate primarily on undamaged seeding surfacescapable of forming doped material of better microstructure (ideallysingle crystalline). Where contact resistance or sheet resistance of thedoped material is sufficiently improved, dimensional confinement by anamorphous masking material may be preferable to a more expansive dopedmaterial region of poorer material quality.

In some embodiments, a semiconductor device structure includes a raiseddoped crystalline material wrapping around a non-silicon crystallineedge of a recess that is at least partially lined with an amorphousmaterial. FIG. 1A is a cross-sectional view of a semiconductor devicestructure 101 including a raised doped crystalline material 150wrapping-around a non-silicon crystalline edge of a recess 132 that isat least partially filled or lined with an amorphous material 115, inaccordance with some embodiments.

Recess 132 is disposed in a non-silicon crystalline body 131. In someembodiments, crystalline body 131 is a III-N material, such as, but notlimited to AlN, GaN, AlGaN, InAlGaN. The inventors currently understandthe structures and techniques described in detail in the context of aIII-N material to be broadly applicable to a family of wurtzitesemiconductors further including at least AgI, ZnO, CdS, CdSe, α-SiC,and BN, and may be further applicable to other non-silicon materialsystems, such as, but not limited to GaAs, InP, InAs, InGaAs, InGaP,etc. It is expected one of skill in the art familiar with thecharacteristics of these alternate semiconductor material systems willbe able to successfully apply the techniques described herein absentsome specific a priori knowledge of a salient incompatibility betweenthe exemplary III-N material system described in detail herein and thealternate material system.

In some embodiments, crystalline body 131 has monocrystallinemicrostructure. Crystal quality of crystalline body 131 may varydramatically as a function of the material composition and techniquesemployed to form crystalline body 131. For example, a III-N crystallinebody 131 may have a dislocation density as high as 10⁸-10¹¹/cm². Asfurther illustrated in FIG. 1A, in some III-N embodiments, the c-axis ofa III-N crystalline structure 131 is ideally aligned approximatelynormal to a top surface of crystalline body 131. Practically however,the c-axis may be slightly tilted, for example a few degrees less thannormal, for example as a result of imperfect epitaxial growth on anoffcut or off-axis substrate, etc. In some embodiments, the {000-1}plane is more proximate a backside surface of crystalline body 131. Suchembodiments may be referred to as Ga polarity (+c) because the threebonds of Ga (or other group III element) point towards a substrate (notillustrated). For alternate embodiments where the three bonds of Ga (orother group III element) point in the opposite direction, crystallinebody 131 would be referred to as N polarity (−c).

Crystalline body 131 may be a portion of bulk substrate, or may be anepitaxial material disposed on a carrier substrate. In eitherembodiment, recess 132 extends only through a partial thickness ofcrystalline body 131. In the exemplary embodiment, recess 132 has adepth defined by recess edge 133 extending from a top surface ofcrystalline body 131 to a bottom of recess 132. The recess in acrystalline body may be partially backfilled with an amorphous materialto prevent nucleation of doped crystalline material upon recess surfacespreviously damaged by an etching process. In FIG. 1A, an amorphousmaterial 115 is disposed over a bottom surface of recess 132.

In some embodiments, an amorphous dielectric composition is disposedwithin a recess in a non-silicon crystalline body. In some exemplaryembodiments, amorphous material 115 is a dielectric offering goodelectrical isolation, such as, but not limited to alumina (Al₂O₃),silica (SiO), silicon nitrides (SiN), silicon oxynitrides (SiON),silicon carbonitrides (SiCN), or polymer dielectrics (e.g.,benzocyclobutene). In some embodiments, amorphous material 115 ispatterned into regions of dielectric material with regions of the recesssurface free of amorphous material. In FIG. 1A, for example, a portionof recess edge 133 is free of amorphous material 115 and a top surfaceof amorphous material 115 is substantially planar. A planarizedamorphous material 115 recessed below a top of recess edge 133 isindicative of amorphous material 115 being selectively etched back.

In some embodiments, one or more device layer material is disposed overa partially recessed non-silicon crystalline body. The one or moredevice layer material is crystalline and may be disposed over a sidewallor a top surface of an underlying crystalline body. In some embodiments,device layer materials are epitaxial having a microstructure andorientation derived from that of the underlying crystalline bodyproviding a growth-seeding surface. The device layer materials may forma heterostructure comprising one or more heterojunction. In the contextof an exemplary GaN crystalline body, device layer materials may includea GaN channel material, and one or more polarization layers (e.g., AlN,and/or AlInN, and/or AlGaN, and/or InGaN). Other device layer materialmay include one or more tunneling layer materials, quantum wellstructure materials, and the like. In exemplary embodiments representedin FIG. 1A, device layer materials include a polarization layer 135disposed over a GaN channel region of crystalline body 131. Polarizationlayer 135 is to create a two dimensional electron gas (2DEG) 136 withinthe channel region.

In some embodiments, a raised doped crystalline material is in physicalcontact with at least one undamaged surface of a non-silicon crystallinebody or device layer material. For such embodiments, the raised dopedcrystalline material has nucleated from the undamaged surface(s) andgrown into a raised structure. Where damaged surface nucleation islimited by amorphous material, raised doped crystalline material can besubstantially monocrystalline following undamaged microstructure of thecrystalline body or device layer material. FIG. 1A illustrates a raiseddoped crystalline material 150 disposed on a surface of polarizationlayer 135. For some embodiments, raised doped crystalline material 150has a dislocation density not more than one order more than that of theunderlying crystalline body 131 and/or polarization layer 135. Forexample, in some exemplary GaN embodiments where crystalline body 131,and/or polarization layer 135, has a dislocation density of between 10⁸cm⁻² and 10¹¹ cm⁻², raised doped crystalline material 150 has adislocation density of between 10⁹ cm⁻² and 10¹² cm⁻². In contrast,raised doped material grown from damaged surface having a much greatnumber of defects than present at the top surface of the device layer,the dislocation density would be many orders of magnitude greater in thebest case, and more likely, simply polycrystalline.

Raised doped crystalline material may be of any composition known to besuitable for the device layer material compositions and/or deviceincorporating the device layer materials.

In one exemplary embodiment where crystalline body 131 is GaN and a topsurface of polarization layer 135 comprises another III-N material(e.g., AlInN), raised doped crystalline material 150 comprises a singlecrystal of InGaN. In further embodiments, the crystalline InGaN is n+doped to function as source and/or drain regions of a transistor. The n+doping level may be any typically employed for an N+ source/drain of aGaN device, as embodiments are not limited in this context.

In some embodiments, a raised doped crystalline material is in physicalcontact with more than one surface of an underlying non-siliconcrystalline body or device layer material. In FIG. 1A, raised dopedcrystalline material 150 extends, or “wraps,” around both a top surfaceof polarization layer 135 and at least a portion of recess edge 133.Raised doped crystalline material 150 is in intimate contact with recesssidewall 133 In the context of semiconductor device structure 101,device functionality may be significantly affected by the quality of theinterface between the 2DEG 136 and raised doped crystalline material150. Where, as illustrated in FIG. 1, raised doped crystalline material150 interfaces the 2DEG 136 through the recess edge 133, the inventorshave found that lower contact resistance may be achieved with a dopedcrystalline material that is substantially single crystalline and hasbeen grown with a growth front that originates from a crystallinesurface undamaged by prior processing, such as the top surface ofpolarization layer 135.

FIG. 1B further illustrates movement of a growth front of raised dopedcrystalline material 150, in accordance with some embodiments. As shown,initial raised doped crystalline material 150A grows from a top c-planesurface of polarization layer 135 not covered by growth mask 140.Nucleation on the recess sidewall 133 may be relatively slower becauseof growth conditions and/or a condition of the microstructure alongrecess sidewall 133. After additional growth time, initial raised dopedcrystalline material 150A has expanded into intermediate raised dopedcrystalline material 150B. Without extensive nucleation at recesssidewall 133, a surface of the initial raised doped crystalline material150A intersecting recess sidewall 133 can laterally advance down therecess sidewall 133 as a single crystal (as depicted by the growth frontarrows) to form intermediate raised doped crystalline material 150Bhaving an intimate material junction with recess sidewall 133. Likewise,with competitive nucleation at the bottom of recess 132 prevented byamorphous material 115, a surface of the intermediate raised dopedcrystalline material 150B intersecting amorphous material 115 canlaterally advance across amorphous material 115 as a single crystal toform extended raised doped crystalline material 150C having good (low)sheet resistance. Growth time may be adjusted to achieve a less-extendraised doped crystalline material (e.g., 150 in FIG. 1A), or amore-extended raised doped crystalline material (e.g., 150C in FIG. 1B),as a matter of device design choice.

In some embodiments, lateral epitaxial growth is performed forsufficient duration to ensure raised doped crystalline material 150covers the portion of crystalline body 131 where 2DEG 136 resides. Infurther embodiments, growth is halted with at least a portion of recesssidewall 133 not covered by raised doped crystalline material 150, asdepicted in FIG. 1A. In such embodiments, substrate leakage from raiseddoped crystalline material 150 may be less than for other embodimentswhere raised doped crystalline material 150 allowed to form over theentire depth of recess sidewall 133 (e.g., as depicted for extendedraised doped crystalline material 150C in FIG. 1B).

In some embodiments, a semiconductor device structure includes a raiseddoped crystalline material wrapping around a non-silicon crystallineedge of a raised crystalline body that extends over an underlyingamorphous material. FIG. 2 is a cross-sectional view of a semiconductordevice structure 201 including a raised doped crystalline material 250wrapping-around a raised non-silicon crystalline body 231 extending overan amorphous material 215, in accordance with some embodiments. For suchembodiments, rather than backfilling a recess as described above,amorphous material 215 is first employed as a template growth mask andthen leveraged to prevent subsequent overgrowth of raised dopedcrystalline material 250 into adjacent structures.

Crystalline body 231 may have any of the compositions described abovefor crystalline body 131. In some embodiments, raised crystalline body231 is a III-N material (e.g., AlN, GaN, AlGaN, InAlGaN, etc.). In someembodiments, crystalline body 231 is another wurtzite semiconductorfurther including at least AgI, ZnO, CdS, CdSe, α-SiC, and BN. In someembodiments, raised crystalline body 231 has zinc-blende crystallinity,including, but not limited to GaAs, InP, InAs, InGaAs, InGaP, etc.

In some embodiments, raised crystalline body 231 has monocrystallinemicrostructure. Crystal quality of crystalline body 231 may varydramatically as a function of the material composition and techniquesemployed to grow raised crystalline body 231 from substrate 205. Forexample, a III-N crystalline body 231 may have a dislocation density ashigh as 10⁸-10¹¹/cm². As further illustrated in FIG. 2, in some III-Nembodiments, the c-axis of a raised III-N crystalline structure 231 isideally aligned approximately normal to a top surface of crystallinebody 231. Practically however, the c-axis may be slightly tilted, forexample a few degrees less than normal, for example as a result ofimperfect epitaxial growth on an offcut or off-axis substrate, etc. Insome embodiments, the {000-1} plane is more proximate a backside surfaceof crystalline body 231. Such embodiments may be referred to as Gapolarity (+c) because the three bonds of Ga (or other group III element)point towards a substrate (not illustrated). For alternate embodimentswhere the three bonds of Ga (or other group III element) point in theopposite direction, crystalline body 231 would be referred to as Npolarity (−c).

In some embodiments, raised crystalline body 231 is disposed over acrystalline surface, which in the exemplary embodiment is a surfaceregion of substantially monocrystalline substrate 205 having apredetermined crystal orientation. Substrate 205 may be a variety ofmaterials, including, but not limited to, silicon, germanium, SiGe,III-V compounds like GaAs, InP, and 3C-SiC. In the exemplary embodimentsubstrate 205 is silicon, which is advantageous for monolithicintegration of HFETs with conventional silicon MOSFETs. Crystallographicorientation of a substantially monocrystalline substrate 205 may be anyof (100), (111), or (110). Other crystallographic orientations are alsopossible. In one exemplary silicon substrate embodiment, substrate 205is (100) silicon. For a (100) silicon substrate 205, the semiconductorsurface may advantageously miscut, or offcut, for example 2-10° toward[110], to facilitate nucleation of raised crystalline structure 231.

Also disposed over the substrate crystalline surface is an amorphousmaterial 215. Amorphous material 215 can have any of the compositionspreviously described for amorphous material 115. In some exemplaryembodiments, amorphous material 215 is a dielectric, such as, but notlimited to alumina (Al₂O₃), silica (SiO), silicon nitrides (SiN),silicon oxynitrides (SiON), silicon carbonitrides (SiCN), or polymerdielectrics (e.g., benzocyclobutene). In some embodiments, amorphousmaterial 215 is an amorphous dielectric material patterned into stripeswith regions of the substrate crystalline surface disposed between thestripes. In one exemplary embodiment where the substrate is (100)silicon, the trenches and stripes of dielectric material have theirlongest lengths aligned with the <110> direction of the substrate.

Amorphous material thickness T2 may vary widely (e.g., 10 nm-200 nm), asmay width W1 (e.g., 20 nm-500 nm). Lateral width W2 of amorphousmaterial features may also vary significantly, for example from 100 nmto 1 μm. Raised crystalline body 231 may be grown to an arbitrary heightas a function of amorphous template material dimensions, epitaxialgrowth conditions and growth duration, etc. Lateral overgrowth over theamorphous material top surface 216 may also vary with implementation.

In some embodiments, one or more device layer material is disposed overa raised non-silicon crystalline body. The one or more device layermaterial is crystalline and may be disposed over a sidewall or a topsurface of a raised crystalline body. In some embodiments, device layermaterials are epitaxial having a microstructure and orientation derivedfrom that a growth-seeding surface of an underlying crystalline body. Aspreviously described above, the device layer materials may form aheterostructure comprising one or more heterojunction. In the context ofan exemplary raised GaN crystalline body, device layer materials mayinclude a GaN channel material, and one or more polarization layers(e.g., AlN, and/or AlInN, and/or AlGaN, and/or InGaN). Other devicelayer material may include one or more tunneling layer materials,quantum well structure materials, and the like. In some exemplaryembodiments represented in FIG. 2, device layer materials include apolarization layer 135 disposed over a GaN channel region of raisedcrystalline body 231. Polarization layer 135 is to create a twodimensional electron gas (2DEG) 136 within the channel region.

In some embodiments, a raised doped crystalline material is in physicalcontact with at least one undamaged surface of a raised non-siliconcrystalline body or device layer material. Raised doped crystallinematerial 250 may be of any of the composition previously described forraised doped crystalline material 150. In one exemplary embodiment whereraised crystalline body 231 is GaN and a top surface of polarizationlayer 135 comprises another III-N material (e.g., AlInN), raised dopedcrystalline material 250 comprises a single crystal of InGaN. In furtherembodiments, the crystalline InGaN is n+ doped to function as atransistor source and/or drain. The n+ doping level may be any typicallyemployed for an N+ source/drain of a GaN device, as embodiments are notlimited in this context.

In some embodiments, a raised doped crystalline material is in physicalcontact with more than one surface of an underlying non-siliconcrystalline body or device layer material. In FIG. 2, raised dopedcrystalline material 250 extends, or “wraps,” around both a top surfaceof polarization layer 135 and at least a portion of raised edge 233.Raised doped crystalline material 250 is in intimate contact with raisededge 233 that extends beyond an underlying amorphous material 215. Asdescribed above, a raised doped crystalline material advantageouslynucleates from undamaged surface(s). Amorphous material 215 will notnucleate raised doped crystalline material. A high quality (mono)crystalline doped material may therefore be grown to provide goodcontact resistance to regions of the raised crystalline body 231 andfurther provide good sheet resistance within any doped materiallaterally extending over amorphous material 215.

In some embodiments, the top surface of polarization layer 135 notcovered by growth mask 140 is undamaged. Raised edge 233 may also be anundamaged crystalline surface fresh from a lateral epitaxial overgrowthof raised crystalline body 231. Prior growth of device layers (e.g.,polarization layer 135) may have preferentially nucleated at the topsurface (c-plane) of raised body 231, rather than on raised edge 233.Raised doped crystalline material 250 may the be in intimate physicalcontact with multiple undamaged surfaces including the top surface ofpolarization layer 135 and raised sidewall 233. For such embodiments,raised doped crystalline material 250 may have nucleated at either, orboth, of these undamaged surfaces.

In other embodiments, raised sidewall 233 may be damaged, for example asa result of prior processing to remove a portion of polarization layer135 and expose 2DEG 136 intersecting raised sidewall 233. For suchembodiments, raised sidewall 233 may have essentially the sameattributes as described above in the context of recess sidewall 133(FIG. 1A). Raised doped crystalline material 250 is then advantageouslynucleated from a top surface of polarization layer 135 with the growthfront proceeding to extend over raised sidewall 233 with longer growthtime, substantially as described above for embodiments having anetch-damaged recess sidewall (FIG. 1B). Regardless of a high number ofcrystal defects at raised sidewall 233, raised doped crystallinematerial 250 is advantageously monocrystalline following undamagedmicrostructure of crystalline body or device layer material. For someembodiments represented by FIG. 2, raised doped crystalline material 250has a dislocation density not more than one order more than that of theunderlying raised crystalline body 231, and/or polarization layer 135.For example, in some exemplary GaN embodiments where raised crystallinebody 231, and/or polarization layer 135, has a dislocation density ofbetween 10⁸ cm⁻² and 10¹¹ cm⁻², crystalline contact material 250 has adislocation density of between 10⁹ cm⁻² and 10¹² cm⁻².

FIG. 3 and FIG. 4 are cross-sectional views depicting GaN transistors301 and 401, respectively, that include raised wrap-around dopedcrystalline material, in accordance with some embodiments. ExemplaryIII-N HFET embodiments are depicted. However, the inventors currentlyunderstand the structures and techniques described herein to be broadlyapplicable to many other semiconductor devices including at leasttransistors (e.g., further including HBTs) and (photo)diodes for LED,photonic, or photovoltaic applications. Therefore, it is expected one ofskill in the art familiar with the characteristics of an alternatesemiconductor device will be able to successfully apply the techniquesdescribed herein absent some specific a priori knowledge of a salientincompatibility between exemplary HFET device(s) and the alternatedevice(s).

In some III-N HFET embodiments in accordance with transistors 301 and401, a gate terminal 360 is disposed over a gate dielectric (notdepicted). The gate terminal and gate dielectric comprise a gate stackover III-N polarization layer 135 and channel region of eithernon-recessed III-N crystalline structure 131 or raised III-N crystallinestructure 231. Gate terminal 260 may be any metal or semiconductor knownto have suitable conductivity and work function difference from achannel semiconductor layer disposed below III-N polarization layer 135.The gate dielectric, if present, may be any high-k or conventionaldielectric material known to be suitable for III-N FETs.

In some embodiments, a single crystalline raised doped material issurrounded by interlayer dielectric. As illustrated in FIG. 3 and FIG.4, surfaces of raised contact material 150 and 250 are encapsulatedwithin a planarized dielectric 380. Device terminal metallization 370may further couple to raised doped crystalline material 150, 250following any known architecture. In the exemplary embodimentillustrated in FIG. 3, raised wrap-around doped crystalline material 150is unplanarized, with contact metallization 370 extending down throughan overlying planarized interlayer dielectric (ILD) 380 and landing onan unplanarized surface of crystalline contact material 150. In theexemplary embodiment illustrated in FIG. 4, raised wrap-aroundcrystalline n+ doped material 250 is planarized, with contactmetallization 370 extending down through ILD 380 and landing on aplanarized surface of crystalline n+ doped material 250. A top surfaceof contact metallization 370 is substantially planar with gate stack360. In some further embodiments, a System-On-Chip (SoC) includessilicon-based transistors (not depicted) that are disposed over a firstcrystalline surface region, and non-silicon-based transistors, such asHFET 401, that are disposed over a second crystalline surface region.

The semiconductor heterostructures and semiconductor devices describedabove may be fabricated using a variety of methods. Epitaxial overgrowthof raised doped crystalline material may utilize a variety of techniquesand processing chamber configurations. In embodiments, lateral epitaxialovergrowth conditions are engineered to favor advancing a lateral growthface of a nucleated crystal.

FIG. 5 is a flow diagram illustrating a method 501 of forming GaNtransistor with raised crystalline contact material, in accordance withembodiments. Method 501 may be utilized to form the semiconductorheterostructure 101 (FIG. 1A), and further form GaN transistor 301 (FIG.3).

Method 501 (FIG. 5) begins with receiving a substrate including acrystalline GaN material layer at operation 505. In some embodiments,III-N epitaxial growth process is employed upstream of method 501 toform the GaN crystal on a native or non-native substrate. Method 501continues at operation 515 where a polarization material layer isdeposited over a surface of the GaN material. Any known technique may beutilized to grow or deposit polarization material at operation 515. Atoperation 525, recesses are etched out of the crystalline GaN materiallayer. In some embodiments, for example a mask is deposited over thepolarization material and patterned to protect the polarization layerduring a subsequent recess etch. In some embodiments, the recess etchperformed at operation 525 entails exposing unmasked portions of the GaNmaterial layer to a plasma-energized etchant species. Any plasma etchprocess known to be suitable for recess etching GaN may be utilized atoperation 525 as embodiments are not limited in this respect.

Method 501 continues at operation 535 where the recess(es) formed atoperation 525 are partially backfilled with an amorphous material. Anyof the amorphous materials described above may be deposited at operation535. Any known shallow trench isolation deposition and/or etchbackprocess may be employed at operation 535. In some embodiments, amorphousdielectric material is conformally deposited and polished back to leaveamorphous material only within recesses, for example with any knownchemical-mechanical polishing (CMP) process. In some embodiments, anamorphous dielectric material is super-conformally deposited to formamorphous material only within recesses, for example with any knownspin-on or super-fill process.

Method 501 continues at operation 545 where raised doped crystallinematerial is epitaxially grown from an exposed, undamaged surface of GaNmaterial. In some embodiments, a material masking a polarization layerduring recess etching operation 525 is laterally etched to expose anedge portion of the underlying polarization material adjacent to an edgeof the recess formed at operation 525. In further embodiments, anepitaxial process may be employed to grow raised doped III-N contactmaterial, such as n+ doped InGaN source/drain material at nucleationsites on an exposed c-plane of the polarization material. Operation 545may rely on first epitaxial growth conditions (e.g., a first III-Ngrowth pressure, a first III-N growth temperature, and a first V/IIIgrowth precursor ratio), and may further include multiple growthconditions. Following an initial growth period, growth conditions may bechanged to favor lateral epitaxial overgrowth (LEO) of raised dopedcrystalline material (e.g., n+ InGaN) to wrap the material aroundsidewalls of the recess formed at operation 525. In some embodiments,the lateral epitaxial growth remains crystalline as it advances over anydamaged GaN surfaces of the recess sidewalls, intimately contacting therecess sidewalls in a region of a 2DEG.

In further embodiments, raised doped source/drain material may also beexpanded dimensionally during a second growth stage performed followingremoval of at least a portion the amorphous growth mask material afterthe amorphous material has been utilized to block nucleation of lowerquality doped source/drain material. For example, an amorphous materialmay be utilized during a first growth stage to ensure a 2DEG interfacesto a single crystalline doped semiconductor. The amorphous mask may thenbe removed and a second quantity of doped semiconductor grown during asecond phase where doped polycrystalline source/drain material is moreacceptable.

At operation 555, a GaN device is completed by forming a gate stack overthe polarization layer within a channel region of the device with anyknown technique. Material(s) masking the polarization layer within thechannel region may be removed, and polarization layer thinned (ifdesired). Also, at operation 555, ILD and metallization contacting theraised doped crystalline material may be formed by any technique knownin the art.

FIG. 6 is flow diagram illustrating a method 601 for forming a SoCincluding silicon MOSFETs and GaN HFETs with raised wrap-aroundcrystalline source/drain material, in accordance with embodiments.Method 601 may be utilized to form the HFET 401 (FIG. 4), for example.FIGS. 7A, 7B, 7C, 7D, 7E, 7F, 7G, and 7H are cross-sectional views of anSoC evolving as selected operations in the method illustrated in FIG. 6are performed, in accordance with embodiments.

Referring first to FIG. 6, method 601 begins with forming an amorphousmaterial over a first region or portion of a substrate. In someembodiments, the amorphous material is a dielectric deposited with anytechnique known to be suitable for the material. At operation 620, theamorphous material is patterned, for example to form trenches in theamorphous material that expose a crystalline seeding surface of thesubstrate. The crystalline seeding surface may be a surface of the bulksubstrate or of some interfacial material of the substrate. For someembodiments, the amorphous material is to serve as both a template forsubsequent non-silicon epitaxial growth, and further as a mask confiningsubsequent overgrowth of raised source/drain material. Any patterntransfer technique may be utilized at operation 620. While any templatestructure known to be suitable for heteroepitaxial growth of anon-silicon crystal may be employed at operation 620, in exemplaryembodiments including a (100) cubic semiconductor surface, the templatecomprises trenches extending in a <110> direction of the substrate. Thetemplate structures, for example, expose stripes of a (100) siliconsurface. FIG. 7A further illustrates one exemplary embodiment wheresubstrate 205 includes both a first (silicon CMOS) region 102 having finstructures 706, and a second region 103 where a raised crystallinestructure is to be formed. As further depicted in 7B, amorphous material215 is patterned into a template structure.

Returning to FIG. 6, at operation 630 a III-N material (e.g., GaN) isgrown from the exposed seeding surface to backfill the templatestructure (e.g., backfill the trench stripes). Material growth may be byany known technique, such as, but not limited to metal-organic chemicalvapor deposition (MOCVD), or molecular beam epitaxy (MBE). In someembodiments, elevated temperatures of 900° C., or more, are employed atoperation 630 to epitaxially grow a GaN crystalline structure. When thetemplate structure is substantially backfilled (i.e., amorphous materialplanarized), growth conditions may be changed to favor lateral epitaxialovergrowth (LEO) of the III-N crystalline structure over the amorphoustemplate material at operation 640. In some embodiments, the LEO processemployed at operation 640 favors formation of inclined sidewall facets.Overgrowth at rates that favor wurtzite crystal facets non-parallel andnon-normal to the c-plane have been found to bend defects away from thec-plane and toward the sidewalls such that quality of a top surface ofthe III-N crystalline structure improves with overgrowth time. In theexemplary embodiment further illustrated in FIG. 7C, upon termination ofoperation 630, III-N crystalline structure 730 is substantially planarwith amorphous material 215. As further illustrated in FIG. 7D, raisedII-N crystalline structures 730A, 730B, and 730C having peaked profilesare formed during an initial portion of operation 640. With additionalLEO, the peaks 730A-C expand into trapezoidal profiles, which continueexpand into a merged raised structure 231 illustrated in FIG. 7E.

Returning to FIG. 6, at operation 650, a III-N polarization layer isgrown over the raised III-N crystalline structure formed by the LEOoperation 640. Any conventional epitaxial process may be employed toform the III-N polarization layer. In some embodiments, the polarizationlayer is grown in conditions that favor growth from the c-plane of theraised III-N crystalline structure. Depending on growth conditions andproperties of the raised III-N crystalline structure sidewalls, verylittle III-N polarization material, or none at all, may form on thesidewalls of the raised III-N crystalline structure during operation650. As further illustrated in FIG. 7F, a polarization layer 135 isgrown on the elevated crystalline structure 231.

Returning to FIG. 6, at operation 660, raised III-N crystallinesource/drain material is epitaxially grown on a region of raised III-Ncrystalline structure formed by the LEO operation 640 and/or on a regionof a III-N polarization layer formed at operation 650. The raised III-Ncrystalline source/drain material may be grown with any epitaxialprocess known to be suitable for the chosen source/drain material. Insome embodiments, n+ (Si) doped InGaN is grown by MOCVD, MBE, or thelike. In some embodiments, before growing the raised III-N crystallinesource/drain material, a sacrificial masking material is formed and/orpatterned over a portion of the III-N polarization layer overlying achannel region of the raised III-N crystalline structure. The raisedIII-N crystalline source/drain material is then grown around the maskingmaterial. In some embodiments, any III-N polarization material disposedon regions of the raised III-N crystalline structure where thecrystalline source/drain material is to interface with the 2DEG may beremoved prior to commencing the raised III-N crystalline source/drainmaterial growth. Any etchant and etching process known to remove theparticular polarization material may be utilized for this purpose.

The sacrificial masking material and amorphous material formed atoperation 610 may confine the raised III-N crystalline source/drainmaterial growth. In some embodiments, the raised III-N crystallinesource/drain material is initially grown with conditions that favorgrowth from the c-plane of exposed polarization material. Subsequently,a LEO process is performed to laterally overgrow the raised III-Ncrystalline source/drain material over a sidewall portion of raisedIII-N crystalline structure. In some embodiments where the LEO processis sufficiently long, the raised III-N crystalline source/drain materialis laterally grown over at least a portion of the amorphous materialformed at operation 610. As further illustrated in FIG. 7G, raised III-N(e.g., n+ InGaN) crystalline source/drain material 250 is laterallyovergrown from a nucleation site on polarization layer 135, wrappingdown a sidewall of raised III-N (e.g., GaN) crystalline structure 231.

Returning to FIG. 6, method 601 continues at operation 670 where a gatestack is deposited over the polarization layer within the HFET channelregion. Source/drain metallization is contacted to the raisedcrystalline source/drain material formed at operation 660. In someembodiments, the masking material disposed over the channel regionduring operation 660 is further utilized as a sacrificial mandrel wherea gate stack of the HFET is to be formed. Following removal of themasking material, the polarization layer may be thinned (e.g., inrecessed gate embodiment). In some embodiments, a dielectric spacer isformed in the recess left by the masking material as insulation betweenthe doped crystalline material formed at operation 660 and the gatestack. In the exemplary embodiment further illustrated in FIG. 7H,formation of the gate stack 360 further entails deposition of a gatedielectric and deposition of a gate electrode within the recess wherethe masking material was removed. Any known dielectric depositionprocess, such as CVD and ALD may be utilized to form the gatedielectric. Any known metal deposition process, such as CVD, ALD, and/orPVD may be utilized to form the gate electrode. ILD 380 may be furtherdeposited and/or planarized before or after formation of the gate stack.Any known technique may be utilized to form contact metallization 370.

Method 601 (FIG. 6) continues at operation 680, a where silicon-basedMOSFET is formed over the substrate. Any known MOSFET fabricationprocess may be enlisted at operation 680. In the exemplary embodimentfurther illustrated in FIG. 7H, a non-planar MOSFET 125 (e.g., finFET)is formed using any known technique. In alternate embodiments, a planarMOSFET is formed. Method 601 (FIG. 6) ends at operation 690 withinterconnection of silicon-based MOSFET and III-N-based HFET using anyknown backend metallization process.

FIG. 8 illustrates a system 800 in which a mobile computing platform 805and/or a data server machine 806 employs an IC including at least oneGaN HFET including raised crystalline contact material, in accordancewith embodiments of the present invention. The server machine 806 may beany commercial server, for example including any number ofhigh-performance computing platforms disposed within a rack andnetworked together for electronic data processing, which in theexemplary embodiment includes a packaged monolithic IC 850. The mobilecomputing platform 805 may be any portable device configured for each ofelectronic data display, electronic data processing, wireless electronicdata transmission, or the like. For example, the mobile computingplatform 805 may be any of a tablet, a smart phone, laptop computer,etc., and may include a display screen (e.g., a capacitive, inductive,resistive, or optical touchscreen), a chip-level or package-levelintegrated system 810, and a battery 815.

Whether disposed within the integrated system 810 illustrated in theexpanded view 820, or as a stand-alone packaged chip within the servermachine 806, packaged monolithic IC 850 includes a memory chip (e.g.,RAM), or a processor chip (e.g., a microprocessor, a multi-coremicroprocessor, graphics processor, or the like) including at least oneIII-N HFET disposed over a HT-stable interfacial layer, for example asdescribe elsewhere herein. The monolithic IC 850 may be further coupledto a board, a substrate, or an interposer 860 along with, one or more ofa power management integrated circuit (PMIC) 830, RF (wireless)integrated circuit (RFIC) 825 including a wideband RF (wireless)transmitter and/or receiver (TX/RX) (e.g., including a digital basebandand an analog front end module further comprises a power amplifier on atransmit path and a low noise amplifier on a receive path), and acontroller thereof 835.

Functionally, PMIC 830 may perform battery power regulation, DC-to-DCconversion, etc., and so has an input coupled to battery 815 and with anoutput providing a current supply to other functional modules. Asfurther illustrated, in the exemplary embodiment, RFIC 825 has an outputcoupled to an antenna (not shown) to implement any of a number ofwireless standards or protocols, including but not limited to Wi-Fi(IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long termevolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA,TDMA, DECT, Bluetooth, derivatives thereof, as well as any otherwireless protocols that are designated as 3G, 4G, 5G, and beyond. Inalternative implementations, each of these board-level modules may beintegrated onto separate ICs coupled to the package substrate of themonolithic IC 850 or within a single IC coupled to the package substrateof the monolithic IC 850.

FIG. 9 is a functional block diagram of a computing device 900, arrangedin accordance with at least some implementations of the presentdisclosure. Computing device 900 may be found inside platform 805 orserver machine 806, for example. Device 900 further includes amotherboard 902 hosting a number of components, such as, but not limitedto, a processor 904 (e.g., an applications processor), which may furtherincorporate at least one III-N HFET including raised crystalline contactmaterial, in accordance with embodiments of the present invention.Processor 904 may be physically and/or electrically coupled tomotherboard 902. In some examples, processor 904 includes an integratedcircuit die packaged within the processor 904. In general, the term“processor” or “microprocessor” may refer to any device or portion of adevice that processes electronic data from registers and/or memory totransform that electronic data into other electronic data that may befurther stored in registers and/or memory.

In various examples, one or more communication chips 906 may also bephysically and/or electrically coupled to the motherboard 902. Infurther implementations, communication chips 906 may be part ofprocessor 904. Depending on its applications, computing device 900 mayinclude other components that may or may not be physically andelectrically coupled to motherboard 902. These other components include,but are not limited to, volatile memory (e.g., DRAM), non-volatilememory (e.g., ROM), flash memory, a graphics processor, a digital signalprocessor, a crypto processor, a chipset, an antenna, touchscreendisplay, touchscreen controller, battery, audio codec, video codec,power amplifier, global positioning system (GPS) device, compass,accelerometer, gyroscope, speaker, camera, and mass storage device (suchas hard disk drive, solid-state drive (SSD), compact disk (CD), digitalversatile disk (DVD), and so forth), or the like.

Communication chips 906 may enable wireless communications for thetransfer of data to and from the computing device 900. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. Communication chips 906 may implement any ofa number of wireless standards or protocols, including but not limitedto those described elsewhere herein. As discussed, computing device 900may include a plurality of communication chips 706. For example, a firstcommunication chip may be dedicated to shorter-range wirelesscommunications, such as Wi-Fi and Bluetooth, and a second communicationchip may be dedicated to longer-range wireless communications such asGPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

While certain features set forth herein have been described withreference to various implementations, this description is not intendedto be construed in a limiting sense. Hence, various modifications of theimplementations described herein, as well as other implementations,which are apparent to persons skilled in the art to which the presentdisclosure pertains are deemed to lie within the spirit and scope of thepresent disclosure.

It will be recognized that the invention is not limited to theembodiments so described, but can be practiced with modification andalteration without departing from the scope of the appended claims. Forexample the above embodiments may include specific combinations offeatures as further provided below.

In one or more first embodiments, a transistor comprises a non-silicondevice material disposed over a substrate, a gate stack disposed on atop surface of the device material and over a channel region of thedevice material, an amorphous material disposed over the substrate andadjacent to, and covering a portion of, a sidewall of the devicematerial. The transistor further comprises a raised doped crystallinematerial disposed on the top surface of the device material, andwrapping around the sidewall of the device material, and contactmetallization coupled to the raised doped crystalline material.

In furtherance of the one or more first embodiments, the raised dopedcrystalline material includes a single crystal extending between the topsurface and sidewall of the device material.

In furtherance of the one or more first embodiments, the raised dopedcrystalline material has a dislocation density no more than 10¹² cm⁻².

In furtherance of the one or more first embodiments, the device layercomprises a damaged region, the amorphous material covers at least someof the damaged region.

In furtherance of the one or more first embodiments, the non-silicondevice material comprises a III-N heterojunction that forms a 2DEGwithin the device material. The raised doped crystalline materialcomprises an n+ doped III-N crystal disposed on c-plane of the devicematerial. The n+ doped III-N crystal wraps around the sidewall of thedevice material, extending over the III-N heterojunction andelectrically coupling with the 2DEG.

In furtherance of the embodiment immediately above, the III-Nheterojunction comprises an AlN polarization layer disposed on GaN. Theraised doped crystalline material is disposed over a top surface of theAlN polarization layer. At least a portion of the raised dopedcrystalline material wrapping around the sidewall is disposed directlyon GaN.

In furtherance of the first embodiments above, the amorphous material isdisposed within a recess in the device material, and a top surface ofthe amorphous material is recessed below the 2DEG

In furtherance of the embodiment immediately above, the raised dopedcrystalline material is in direct contact with the amorphous material.

In furtherance of the first embodiments above, the device materialcomprises a raised III-N crystalline body extending laterally over aportion of the amorphous material.

In furtherance of the embodiment immediately above, the raised dopedcrystalline material is in direct contact with the amorphous material.

In furtherance of the embodiment immediately above, the substrate issilicon, the amorphous material and the device material are disposedover a (100) surface of the substrate, the gate stack comprises a gateelectrode disposed on a gate dielectric, and the gate stack is insulatedfrom the raised doped crystalline material by a dielectric spacer.

In one or more second embodiments, a semiconductor device comprises acrystalline substrate, an amorphous material disposed over thesubstrate, and an elevated structure having non-cubic crystallinitydisposed in one or more first trench in the amorphous material andlaterally extending over a portion of the amorphous material. One ormore device layer having the same crystallinity as the elevatedstructure is disposed over a top surface of the elevated structure, butabsent from at least a portion of a sidewall of the elevated structure.A raised doped source/drain material having the same crystallinity asthe elevated structure disposed over a top surface of the one or moredevice layer, and further wrapping around the elevated structure tocontact the portion of a sidewall not covered by the device layer.Contact metallization is coupled to the raised source/drain material.

In furtherance of the one or more second embodiments, the raised dopedsource/drain material comprises a single crystal extending between thesidewall and the contact metallization.

In furtherance of the one or more second embodiments, a number ofcrystal defects at the sidewall is greater than the number of crystaldefects at the top surface of the one or more device layer.

In furtherance of the embodiment immediately above, the dislocationdensity of the raised doped source/drain material is not more than oneorder of magnitude greater than that of the elevated structure.

In furtherance of the embodiment immediately above, the raised dopedsource/drain material has a dislocation density no more than 10¹² cm⁻².

In one or more third embodiments, a method of forming semiconductordevice comprises epitaxially growing a device layer on a non-siliconcrystalline material disposed over a substrate, depositing an amorphousmaterial adjacent to a sidewall of the non-silicon crystalline material,nucleating an epitaxial doped crystalline source/drain material on thedevice layer, and epitaxially growing the doped crystalline source/drainmaterial laterally around a sidewall of the device layer and thenon-silicon crystalline material.

In furtherance of the embodiment immediately above, the method furthercomprises etching a recess into the non-silicon crystalline material toform the sidewall in the non-silicon crystalline material, depositingthe amorphous material in the recess.

In furtherance of the third embodiments, the method further comprisesdepositing the amorphous material over the substrate, forming one ormore trench in the amorphous material, epitaxially growing a raisednon-cubic crystalline structure over the substrate, within the one ormore trench, and laterally over the amorphous material, and epitaxiallygrowing the one or more device layer over the raised structure.

In furtherance of the embodiment immediately above, the substratesurface comprises (100) silicon offcut by less than 10°, and epitaxiallygrowing the raised structure further comprises laterally growing III-Nmaterial over the trench material at a rate that favors wurtzite crystalfacets non-parallel and non-normal to the c-plane. Epitaxially growingthe device layer comprises growing a III-N polarization layer over thetop surface of the raised III-N material parallel to the c-plane.

In furtherance of the embodiment immediately above, epitaxially growingthe raised structure further comprises laterally growing GaN, growingthe one or more device layer further comprises growing a III-Npolarization layer over the GaN, and epitaxially growing the dopedcrystalline source/drain material comprises laterally growing n+ dopedInGaN having a dislocation density no more than one order or magnitudegreater than the one or more device layer.

In furtherance of the third embodiments, the method further comprisesdepositing a gate stack over the device layer, and forming source/draincontact metallization to a first and a second region of dopedcrystalline source/drain material disposed on opposite sides of the gatestack.

However, the above embodiments are not limited in this regard and, invarious implementations, the above embodiments may include theundertaking only a subset of such features, undertaking a differentorder of such features, undertaking a different combination of suchfeatures, and/or undertaking additional features than those featuresexplicitly listed. The scope of the invention should, therefore, bedetermined with reference to the appended claims, along with the fullscope of equivalents to which such claims are entitled.

1-20. (canceled)
 21. A transistor, comprising: a non-silicon devicematerial disposed over a crystalline substrate; a gate stack disposed ona top surface of the device material and over a channel region of thedevice material; an amorphous material disposed over the substrate andadjacent to, and covering a portion of, a sidewall of the devicematerial; a raised doped crystalline material disposed on the topsurface of the device material, and wrapping around the sidewall of thedevice material; and contact metallization coupled to the raised dopedcrystalline material.
 22. The transistor of claim 21, wherein the raiseddoped crystalline material includes a single crystal extending betweenthe top surface and sidewall of the device material.
 23. The transistorof claim 21, wherein the raised doped crystalline material has adislocation density no more than 10¹² cm⁻².
 24. The transistor of claim21, wherein the device layer comprises a surface damaged region; and theamorphous material covers at least some of the surface damaged region.25. The transistor of claim 21, wherein: the non-silicon device materialcomprises a III-N heterojunction that forms a 2DEG within the devicematerial; the raised doped crystalline material comprises an n+ dopedIII-N crystal disposed on the c-plane of the device material; and the n+doped III-N crystal wraps around the sidewall of the device material,extending over the III-N heterojunction and electrically coupling withthe 2DEG.
 26. The transistor of claim 25, wherein: the III-Nheterojunction comprises an AlN polarization layer disposed on GaN; theraised doped crystalline material is disposed over a top surface of theAlN polarization layer; and at least a portion of the raised dopedcrystalline material wrapping around the sidewall is disposed directlyon GaN.
 27. The transistor of claim 25, wherein: the amorphous materialis disposed within a recess in the device material; and a top surface ofthe amorphous material is recessed below the 2DEG.
 28. The transistor ofclaim 27, wherein the raised doped crystalline material is in directcontact with the amorphous material.
 29. The transistor of claim 25,wherein the device material comprises a raised III-N crystalline bodyextending laterally over a portion of the amorphous material.
 30. Thetransistor of claim 29, wherein the raised doped crystalline material isin direct contact with the amorphous material.
 31. The transistor ofclaim 30, wherein: the substrate is silicon; the amorphous material andthe device material are disposed over a (100) surface of the substrate;the gate stack comprises a gate electrode disposed on a gate dielectric;and the gate stack is insulated from the raised doped crystallinematerial by a dielectric spacer.
 32. A semiconductor device, comprising:a crystalline substrate; an amorphous material disposed over thesubstrate; an elevated structure having crystallinity different than thesubstrate and disposed in one or more first trench in the amorphousmaterial and laterally extending over a portion of the amorphousmaterial; one or more device layer having the same crystallinity as theelevated structure disposed over a top surface of the elevatedstructure, but absent from at least a portion of a sidewall of theelevated structure; a raised doped source/drain material having the samecrystallinity as the elevated structure disposed over a top surface ofthe one or more device layer, and further wrapping around the elevatedstructure to contact the portion of a sidewall not covered by the devicelayer; and contact metallization coupled to the raised source/drainmaterial.
 33. The device of claim 32, wherein: the raised dopedsource/drain material comprises a single crystal extending between thesidewall and the contact metallization.
 34. The device of claim 32,wherein a number of crystal defects at the sidewall is greater than thenumber of crystal defects at the top surface of the one or more devicelayer.
 35. The device of claim 34, wherein the dislocation density ofthe raised doped source/drain material is not more than one order ofmagnitude greater than that of the elevated structure.
 36. The device ofclaim 35, wherein the raised doped source/drain material has adislocation density no more than 10¹² cm⁻².
 37. A method of forming asemiconductor device, the method comprising: epitaxially growing adevice layer on a non-silicon crystalline material disposed over asubstrate; depositing an amorphous material adjacent to a sidewall ofthe non-silicon crystalline material; nucleating an epitaxial, dopedcrystalline source/drain material on the device layer; and epitaxiallygrowing the doped crystalline source/drain material laterally around asidewall of the device layer and the non-silicon crystalline material.38. The method of claim 37, further comprising: etching a recess intothe non-silicon crystalline material to form the sidewall in thenon-silicon crystalline material; and depositing the amorphous materialin the recess.
 39. The method of claim 37, further comprising:depositing the amorphous material over the substrate; forming one ormore trenches in the amorphous material; epitaxially growing a raisedcrystalline structure over the substrate, within the one or more trench,and laterally over the amorphous material; and epitaxially growing theone or more device layers over the raised crystalline structure.
 40. Themethod of claim 39, wherein: the substrate surface comprises (100)silicon offcut by less than 10°; epitaxially growing the raisedstructure further comprises laterally growing III-N material over thetrench material at a rate that favors wurtzite crystal facetsnon-parallel and non-normal to the c-plane of the III-N material; andepitaxially growing the device layer comprises growing a III-Npolarization layer over the top surface of the raised III-N materialparallel to the c-plane.
 41. The method of claim of claim 40, wherein:epitaxially growing the raised structure further comprises laterallygrowing GaN; growing the one or more device layer further comprisesgrowing a III-N polarization layer over the GaN; and epitaxially growingthe doped crystalline source/drain material comprises laterally growingn+ doped InGaN having a dislocation density no more than one order ormagnitude greater than a dislocation density of the one or more devicelayers.
 42. The method of claim 39, wherein the method furthercomprises: depositing a gate stack over the device layer; and formingsource/drain contact metallization to a first region of dopedcrystalline source/drain material disposed on a first side of the gatestack, and to a second region of doped crystalline source/drain materialdisposed on a second side of the gate stack.